Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors
نویسندگان
چکیده
A special case of the x-ray multiple diffraction phenomenon, the Bragg surface diffraction ~BSD!, has been investigated under lattice damage due to ion implantation in GaAs ~001! samples. The BSD profile is very sensitive to the diffraction regime ~dynamical or kinematical! and provides information regarding crystalline perfection and lattice strains in both directions—parallel and perpendicular—to the sample surface. Results from grazing-incidence x-ray diffraction and reciprocal space mapping are also reported. © 1997 American Institute of Physics. @S0003-6951~97!00844-9#
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تاریخ انتشار 1997